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| MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 35 to 60 V Forward Current 7.5 A Schottky Barrier Rectifiers ITO-220AC (MBRF7Hxx) TO-220AC (MBR7Hxx) 0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) CASE 0.405 (10.27) 0.383 (9.72) 0.185 (4.70) 0.175 (4.44) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08) DIA. 0.055 (1.39) 0.045 (1.14) 0.600 (15.5) 0.580 (14.5) 0.603 (15.32) 0.573 (14.55) 1 0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38) PIN 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.060 (1.52) PIN 1 0.110 (2.80) 0.100 (2.54) PIN 1 PIN 2 PIN 2 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.55) 0.014 (0.36) TO-263AB (MBRB7Hxx) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN K 0.055 (1.40) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) PIN 1 PIN 2 K - HEATSINK Mounting Pad Layout TO-263AB 0.42 (10.66) 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) 0.63 (17.02) Dimensions in inches and (millimeters) 0.360 (9.14) 0.320 (8.13) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Features * Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 * Metal silicon junction, majority carrier conduction * Low forward voltage drop, low power loss and high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * High temperature soldering guaranteed: 250 C/10 seconds, 0.25" (6.35 mm) from case * Rated for reverse surge and ESD * 175 C maximum operation junction temperature www.vishay.com 1 Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08oz., 2.24g Document Number 88796 14-Mar-03 MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings Parameter (TC = 25 C unless otherwise noted) Symbol VRRM VRWM VDC IF(AV) IFRM EAS IFSM IRRM ERSM VC dv/dt TJ TSTG VISOL MBR7H35 MBR7H45 MBR7H50 MBR7H60 35 35 35 45 45 45 7.5 15 80 150 1.0 20 25 10,000 -65 to +175 -65 to +175 4500 3500(2) 1500(3) (1) Unit V V V A A mJ A Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Max. average forward rectified current (see fig. 1) Peak repetitive forward current at TC = 155 C (rated VR, 20 KHz sq. wave) Non-repetitive avalanche energy at 25 C, IAS = 4 A, L = 10 mH Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current at tp = 2.0 s, 1 KHZ Peak non-repetitive reverse energy (8/20 s waveform) Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH 30% 50 50 50 60 60 60 0.5 10 A mJ kV V/s C C V Electrical Characteristics (TC = 25 C unless otherwise noted) Parameter Maximum instantaneous forward voltage(4) at at at at IF = IF = IF = IF = 7.5 A 7.5 A 15 A 15 A TJ = 25 C TJ = 125 C TJ = 25 C TJ =125 C TJ = 25 C TJ =125 C Symbol MBR7H35, MBR7H45 Typ - 0.50 - 0.61 - 3.0 Max 0.63 0.55 0.75 0.66 50 10 MBR7H50, MBR7H60 Typ - 0.58 - 0.68 - 2.0 Max 0.73 0.61 0.87 0.72 50 10 Unit VF V A mA Maximum instantaneous reverse current at rated DC blocking voltage(4) IR Thermal Characteristics (TC = 25 C unless otherwise noted) Parameter Thermal resistance from junction to case Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (2) Clip mounting (on case), where leads do overlap heatsink Symbol RJC MBR 3.0 MBRF 5.0 MBRB 3.0 Unit C/W (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (4) Pulse test: 300 ms pulse width, 1% duty cycle Ordering Information Product MBR7H35 - MBR7H60 MBRF7H35 - MBRF7H60 MBRB7H35 - MBRB7H60 Case TO-220AC ITO-220AC TO-263AB Package Code 45 45 31 45 81 Package Option Anti-Static tube, 50/tube, 2K/carton Anti-Static tube, 50/tube, 2K/carton 13" reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13" reel, 800/reel, 4.8K/carton Document Number 88796 14-Mar-03 www.vishay.com 2 MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve 10 MBR, MBRB 8 175 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 150 125 100 75 50 25 6 MBRF 4 2 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Leakage Current (mA) 100 10 Fig. 4 - Typical Reverse Characteristics TJ = 150C 1 TJ = 125C 0.1 Instantaneous Forward Current (A) 10 TJ = 150C 1 TJ = 25C TJ = 125C 0.01 MBR7H35 -- MBR7H45 MBR7H50 -- MBR7H60 TJ = 25C 0.1 MBR7H35 -- MBR7H45 MBR7H50 -- MBR7H60 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.0001 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 1000 Fig. 6 - Typical Transient Thermal Impedance 10 100 Transeint Thermal Impedance (C/W) pF - Junction Capacitance TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 1.0 10 MBR7H35 -- MBR7H45 MBR7H50 -- MBR7H60 1 0.1 1 10 100 0.1 0.01 0.1 1 10 Reverse Voltage (V) Document Number 88796 14-Mar-03 t, Pulse Duration (sec.) www.vishay.com 3 |
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